Large area and broadband ultra-black absorber using microstructured aluminum doped silicon films

• DOI: 10.1038/srep42750
• Publication Date: 2017-02-16T10:00:17Z
• Authors: Zhen Liu; Hai Liu; Xiaoyi Wang; Haigui Yang; Jinsong Gao
• Keywords: Black silicon; Reflection

Abstract A large area and broadband ultra-black absorber based on microstructured aluminum (Al) doped silicon (Si) films prepared by a low-cost but very effective approach is presented. The average absorption of the greater than 99% within wide range from 350 nm to 2000 nm, its size reaches 6 inches. We investigate fabrication mechanism find that Al atom in improves formation nanocone-like microstructures film surface, resulting significant decrease reflection incident light. further discussed experiments simulated calculations detail. results show atoms Mie resonance formed contribute super-high absorption.