High-speed maskless nanolithography with visible light based on photothermal localization

• DOI: 10.1038/srep43892
• Publication Date: 2017-03-02T10:59:19Z
• Authors: Jingsong Wei; Kui Zhang; Tao Wei; Yang Wang; Yiqun Wu; Mufei Xiao
• Keywords: Photothermal effect

Abstract High-speed maskless nanolithography is experimentally achieved on AgInSbTe thin films. The lithography was carried out in air at room temperature, with a GaN diode laser (λ = 405 nm), and large sample disk of diameter 120 mm. normal width the written features measures 46 ± 5 nm, about 1/12 diffraction allowed smallest light spot, speed reaches 6 ~ 8 m/s, tens times faster than traditional writing methods. resolution instantaneously tunable by adjusting power. reason behind significant breakthrough terms found as concentration induced heat. Therefore, heat spot far smaller so does size features. Such sharp focus occurs only selected material, phenomenon referred photothermal localization response. physics effect explained supported numerical simulations.