Zinc oxidenanowires: controlled low temperature growth and some electrochemical and optical nano-devices

• DOI: 10.1039/b816619f
• Publication Date: 2008-12-12T10:36:09Z
• Authors: M. Willander; L. L. Yang; A. Wadeasa; S. U. Ali; M. H. Asif; Q. X. Zhao; O. Nur
• Keywords: 02 engineering and technology; 0210 nano-technology

In this paper we present our new findings on the growth, characterization and nano-devices based on ZnO nanowires. We will limit the scope of this article to low temperature grown ZnO nanowires, due to the fact that low temperature growth is suitable for many applications. On growth and size control we will present our methodology for the growth of ZnO nanowires on Si substrates using low temperature techniques. The effect of the annealing on these low temperature grown ZnO nanowires is investigated and discussed. We then present our results on the surface recombination velocity of ZnO nanowires. This will be followed by the demonstration of new prototype nano-devices. These nano-devices include the demonstration of two new electrochemical nano-sensors. These are the extended gate glucose sensor and the calcium ion selective sensor using ionophore membrane coating on ZnO nanowires. Finally we will present results from light emitting diodes (LEDs) based on our ZnO nanowires grown on p-type organic semiconductors. The effect of the interlayer design of this hybrid organic–inorganic LED on the emission properties is highlighted.