A selective etching phenomenon on {001} faceted anatase titanium dioxide single crystal surfaces by hydrofluoric acid
Engineering
Chemical sciences
02 engineering and technology
0210 nano-technology
530
510
DOI:
10.1039/c0cc04848h
Publication Date:
2011-01-14T15:57:57Z
AUTHORS (6)
ABSTRACT
A selective etching phenomenon on {001} faceted anatase TiO(2) single crystal surfaces by HF and associated etching mechanism are reported. Density functional theory (DFT) calculations reveal that HF stabilizes the grown {001} facets at low concentrations, but selectively destroys the grown {001} facets at high concentrations.
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