Microstructural analysis and phase transformation of CuInS2 thin films during sulfurization

• DOI: 10.1039/c1ce05276d
• Publication Date: 2011-07-09T08:30:47Z
• Authors: Chia-Hung Tsai; Jyh-Ming Ting; Wen-Hsien Ho
• Keywords: Torr; Vacuum evaporation

This study reports the preparation of CuInS2 (CIS) thin films on Mo-coated glass substrates using in situ sulfurization thermally evaporated Cu–In precursor a thermal evaporation chamber. The were at 1.2 × 10−6 Torr and further was carried out 8 10% H2S, balanced by Ar. alloy consist three types layered structures with fixed total thickness 800 nm. Different temperature–time profiles used during processes. Various phases identified both X-ray diffractometry (XRD) Raman spectroscopy, latter which reveals additional structural information that cannot be observed XRD spectra. Direct evidence showing growth CIS phase from an Cu11In9 is shown TEM images. Although there are minor differences these samples lead to slightly different paths, can described general reaction sequence.