High pressure synthesis of SmNiO3 thin films and implications for thermodynamics of the nickelates

• DOI: 10.1039/c3tc00844d
• Publication Date: 2013-02-21T16:21:28Z
• Authors: R. Jaramillo; Frank Schoofs; Sieu D. Ha; Shriram Ramanathan
• Keywords: Chemical Stability; Metal–insulator transition

The rare-earth nickelates (LnNiO3, Ln = lanthanide) are interesting from both fundamental and applied perspectives, but synthesis remains a bottleneck to research due their thermodynamic instability. Here we report the of SmNiO3 thin films on oxidized silicon wafers by physical vapor deposition followed high pressure oxygen annealing at intermediate temperatures. annealed show an insulator–metal transition characteristic bulk samples. Our experimental observations then allow us estimate bounds phase stability regime, which particularly useful given dearth direct data available for LnNiO3. We examine limitations these analyses ultra-thin films. stabilization canonical semiconductor template creates opportunities study utility above room temperature (at TIM 400 K) in electronic devices.