Performance improvement of multilayer InSe transistors with optimized metal contacts

• DOI: 10.1039/c4cp04968c
• Publication Date: 2014-12-11T12:34:17Z
• Authors: Wei Feng; Xin Zhou; Wei Quan Tian; Wei Zheng; PingAn Hu
• Keywords: 02 engineering and technology; 0210 nano-technology

This work is focused on achieving high performance multilayer InSe field-effect transistors by a systematic experiment study metal contacts. The can be achieved choosing an ideal contact and adopting proper thickness of nanosheets. By (33 nm), the FETs was improved following sequence Al, Ti, Cr In extracted mobility values are 4.7 cm(2) V(-1) s(-1), 27.6 74 s(-1) 162 for In, respectively. on/off ratios 10(7)-10(8). device electronic properties interface morphology deposition metals/InSe indicate that between metals plays significant role in forming low resistance. Our may pave way applications nano-electrical nano-optoelectronic devices.