Improvement of the gas cluster ion beam-(GCIB)-based molecular secondary ion mass spectroscopy (SIMS) depth profile with O2+ cosputtering

02 engineering and technology 0210 nano-technology
DOI: 10.1039/c5an02677f Publication Date: 2016-03-08T11:31:12Z
ABSTRACT
The Ar<sub>2500</sub><sup>+</sup> and O<sub>2</sub><sup>+</sup> cosputter in ToF-SIMS depth profiles retained &gt;95% molecular ion intensity the steady-state.
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