Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
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DOI:
10.1039/c5ce01106j
Publication Date:
2015-08-03T09:04:11Z
AUTHORS (3)
ABSTRACT
For the first time, n-type homoepitaxial semiconducting β-Ga<sub>2</sub>O<sub>3</sub> layers were attained by MOVPE.
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