Realization of highly-dense Al2O3 gas barrier for top-emitting organic light-emitting diodes by atomic layer deposition
Atomic layer epitaxy
Deposition
Realization (probability)
DOI:
10.1039/c5ra21424f
Publication Date:
2015-11-25T13:32:26Z
AUTHORS (9)
ABSTRACT
In this paper Al<sub>2</sub>O<sub>3</sub> films are prepared with a method of atomic layer deposition (ALD) as the thin film encapsulation technology for top-emitting organic light-emitting diodes (TE-OLED).
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