Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon

• DOI: 10.1039/c6ra24825j
• Publication Date: 2016-12-22T19:55:31Z
• Authors: T. T. Thabethe; E. G. Njoroge; T. T. Hlatshwayo; T. P. Ntsoane; J. B. Malherbe
• Keywords: Oxygen; Temperatures; Rutherford backscattering spectrometry (RBS); Scanning electron microscopy (SEM); 669; Grazing incidence X-ray diffraction (GIXRD); 02 engineering and technology; 0210 nano-technology; Crystals

A study of a tungsten (W) thin film deposited on single crystalline 6H–SiC substrate and annealed in Ar at temperatures 700 °C, 800 900 °C 1000 for 1 hour was conducted.