Ab initio performance predictions of single-layer In–V tunnel field-effect transistors

• DOI: 10.1039/c7cp02695a
• Publication Date: 2017-06-05T09:24:14Z
• Authors: Juan Lu; Zhi-Qiang Fan; Jian Gong; Xiang-Wei Jiang
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

The device performances of both n-type and p-type tunnel field-effect transistors (TFETs) made single-layer InX (X = N, P, As, Sb) are theoretically evaluated through density functional theory (DFT) <italic>ab initio</italic> simulations in this paper.