Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer

• DOI: 10.1039/c7nr02099f
• Publication Date: 2017-05-05T11:23:18Z
• Authors: Yizhe Sun; Yibin Jiang; Huiren Peng; Jiangliu Wei; Shengdong Zhang; Shuming Chen
• Keywords: Ohmic contact; Quantum Efficiency

Efficient inverted quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated by using 15% Mg doped ZnO (Zn0.85Mg0.15O) as an interfacial modification layer. By doping into ZnO, the conduction band level, density of oxygen vacancies and conductivity can be tuned. To suppress excess electron injection, a 13 nm Zn0.85Mg0.15O interlayer with relatively higher edge lower is inserted between transport layer QD layer, which improves balance charge injection blocks non-radiative pathway. Moreover, according to electrical optical studies devices materials, quenching sites at surface effectively reduced Mg-doping. Therefore exciton induced nanoparticles largely suppressed capping Zn0.85Mg0.15O. Consequently, red QLEDs exhibit superior performance maximum current efficiency 18.69 cd A-1 peak external quantum 13.57%, about 1.72- 1.74-fold than 10.88 7.81% without Similar improvements also achieved in green QLEDs. Our results indicate that serve effective for suppressing improving devices.