Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

• DOI: 10.1039/c7nr07586c
• Publication Date: 2017-12-01T01:02:39Z
• Authors: Kehao Zhang; Bhakti Jariwala; Jun Li; Natalie C. Briggs; Baoming Wang; Dmitry Ruzmetov; Robert A. Burke; Jordan O. Lerach; Tony G. Ivanov; Md Haque; Randall M. Feenstra; Joshua A. Robinson
• Keywords: 02 engineering and technology; 0210 nano-technology

Large area 2D MoS₂ and WSe₂ are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling interlayer charge transfer is carefully studied. This work shows that few layer film the appropriate choice towards device application of synthetic 2D/3D heterostructures.