Indium-doped ZnO horizontal nanorods for high on-current field effect transistors

• DOI: 10.1039/c7ra09105b
• Publication Date: 2017-12-01T13:08:42Z
• Authors: Ziqiang Zhu; Borui Li; Jian Wen; Zhao Chen; Zhiliang Chen; Ranran Zhang; Shuangli Ye; Guojia Fang; Jun Qian
• Keywords: Nanorod

High on-current field effect transistors (FETs) are highly desirable for driving information displays such as active matrix organic light-emitting diode displays.