Effect of OH− on chemical mechanical polishing of β-Ga2O3 (100) substrate using an alkaline slurry

• DOI: 10.1039/c7ra11570a
• Publication Date: 2018-02-08T15:23:42Z
• Authors: Chuanjin Huang; Wenxiang Mu; Hai Zhou; Yongwei Zhu; Xiaoming Xu; Zhitai Jia; Lei Zheng; Xutang Tao
• Keywords: Chemical Mechanical Planarization; Alkaline earth metal

β-Ga2O3, a semiconductor material, has attracted considerable attention given its potential applications in high-power devices, such as high-performance field-effect transistors. For decades, β-Ga2O3 been processed through chemical mechanical polishing (CMP). Nevertheless, the understanding of effect OH- on CMP with an alkaline slurry remains limited. In this study, substrates were successively subjected to (MP), and etching. Then, investigate changes that occurred surfaces samples, samples characterised atomic force microscopy (AFM), three-dimensional laser scanning confocal (LSCM), electron (SEM) X-ray photoelectron spectroscopy (XPS). LSCM SEM results showed is highly vulnerable brittle fracture during MP. AFM revealed ultrasmooth nondamaged surface low R approximately 0.18 nm could be obtained CMP. XPS indicated metamorphic layer, which mainly contains soluble gallium salt (Ga(OH)4 -), formed reaction. A dendritic pattern appeared after This phenomenon reaction nonuniform selective manner. The study will aid optimization preparation