CVD growth of molybdenum diselenide surface structures with tailored morphology

• DOI: 10.1039/c8ce00917a
• Publication Date: 2018-07-26T17:04:54Z
• Authors: M. Naeem Sial; Muhammad Usman; Binjie Zheng; Yanan Yu; Andraž Mavrič; Fangzhu Qing; Matjaz Valant; Zhiming M. Wang
• Keywords: Molybdenum diselenide; Chemical vapor deposition; 02 engineering and technology; 2D materials; 0210 nano-technology; Transition metal dichalcogenides; Seed promotor

Controllable atmospheric pressure CVD has been optimized to grow transition metal dichalcogenide MoSe2 with tunable morphology at 750 °C on a silicon substrate with a native oxide layer of 250 nm.