In situ XPS analysis of the atomic layer deposition of aluminium oxide on titanium dioxide

• DOI: 10.1039/c8cp06912c
• Publication Date: 2018-12-19T09:34:33Z
• Authors: Robert H. Temperton; Andrew Gibson; James N. O'Shea
• Keywords: Rutile; Titanium Dioxide; Titanium oxide; Aluminium oxides; Deposition

Ultra-thin aluminium oxide was grown on a rutile titanium dioxide surface by atomic layer deposition using trimethylaluminium and water precursors. This process, carried out realistic temperatures pressures (1 mbar, 450 K), monitored in situ near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS). provides insight into the chemistry at interface between two layers - specifically reduction of atoms from Ti4+ to Ti3+ upon dosing trimethylaluminium. These defect states become locked heterojunction's interface, with implications its electronic structure, can act as an indicator when complete coverage substrate is achieved.