Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality

• DOI: 10.1039/c8nr05787g
• Publication Date: 2018-08-29T10:39:09Z
• Authors: Mahdi Zamani; Gözde Tütüncüoglu; Sara Martí-Sánchez; Luca Francaviglia; Lucas Güniat; Lea Ghisalberti; Heidi Potts; Martin Friedl; Edoardo Markov; Wonjong Kim; Jean-Baptiste Leran; Vladimir G. Dubro...; Jordi Arbiol; Anna Fontcuberta ...
• Keywords: Compound semiconductors; Structural and optical properties; Crystal qualities; Zinc-blende structures; nanowire growth, self-catalyzed,A-polar, defect- free, molecular beam epitaxy; Optical functionalities; Semiconductor nanowire; 02 engineering and technology; 0210 nano-technology; Ga-rich conditions; Stacking disorders

Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds.