Simulations of the effect of an oxide on contact area measurements from conductive atomic force microscopy
02 engineering and technology
0210 nano-technology
DOI:
10.1039/c8nr08605b
Publication Date:
2018-12-11T17:46:13Z
AUTHORS (4)
ABSTRACT
Atomistic simulations provide an approach to correcting the error in contact-area measurements from conductive atomic force microscopy for platinum with a thin insulating layer.
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