Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

• DOI: 10.1039/c8qm00193f
• Publication Date: 2018-06-13T09:05:40Z
• Authors: S. Bebiche; P. A. Cisneros-Perez; T. Mohammed-Brahim; M. Harnois; J. Rault-Berthelot; C. Poriel; E. Jacques
• Keywords: Organic semiconductor

The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-<italic>b</italic>]fluorene and dihydroindeno[2,1-<italic>b</italic>]fluorene derivatives have been studied.