Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

01 natural sciences 7. Clean energy 0104 chemical sciences
DOI: 10.1039/c8tc01533c Publication Date: 2018-05-18T15:05:45Z
ABSTRACT
2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II band alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.
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