Polymer field-effect transistor memory based on a ferroelectric nylon gate insulator

• DOI: 10.1039/c9tc06868f
• Publication Date: 2020-02-25T17:45:25Z
• Authors: Saleem Anwar; Beomjin Jeong; Mohammad Mahdi Ab...; Wojciech Zajaczko...; Morteza Hassanpou...; Kamal Asadi
• Keywords: 01 natural sciences; 0104 chemical sciences

Ultra-smooth thin-films of nylons, one of the most successful commercialized polymers, have been realized for the application in ferroelectric field effect transistors.