(100)-Oriented gallium oxide substrate for metal organic vapor phase epitaxy for ultraviolet emission
Ultraviolet
Gallium Oxide
Vapor phase
DOI:
10.1039/d0ce00328j
Publication Date:
2020-03-18T13:43:00Z
AUTHORS (8)
ABSTRACT
High-quality low-stress GaN and MQWs emitting in the UV region were grown on (100) β-Ga<sub>2</sub>O<sub>3</sub> by MOVPE using a pulsed-flow method.
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