Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors

• DOI: 10.1039/d0na00953a
• Publication Date: 2021-03-12T19:53:35Z
• Authors: A. Toral-Lopez; F. Pasadas; E. G. Marin; A. Medina-Rull; J. M. Gonzalez-Me...; F. G. Ruiz; D. Jiménez; A. Godoy
• Keywords: Transistor model; Upgrade

Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order boost their adoption, the availability of numerical tools physically-based models able support experimental activities provide them with useful guidelines becomes essential. In this context, we propose theoretical approach that combines simulations small-signal modeling analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means self-consistent physics-based calculations later feed circuit level via model based on dynamic intrinsic capacitances device. At stage, possibilities range from evaluation performance single device design complex circuits combining multiple transistors. work, validate our against results exemplify its use capability assessing impact scaling MoS2-based targeting RF