Imaging and quantification of charged domain walls in BiFeO3

• DOI: 10.1039/d0nr01258k
• Publication Date: 2020-04-07T09:41:03Z
• Authors: Marco Campanini; Elzbieta Gradausk...; Morgan Trassin; Di Yi; Pu Yu; Ramamoorthy Ramesh; Rolf Erni; Marta D. Rossell
• Keywords: 02 engineering and technology; 0210 nano-technology

Charged domain walls in ferroelectrics hold great promise for the design of novel electronic devices due to their enhanced local conductivity. In fact, charged show unique properties including possibility being created, moved and erased by an applied voltage. Here, we demonstrate that are constituted a core region where most screening charge is localized such accumulation responsible particular, link between structural distortions phenomena 109° tail-to-tail BiFeO3 elucidated series multiscale analysis performed means scanning probe techniques, conductive atomic force microscopy (cAFM) resolution differential phase contrast transmission electron (DPC-STEM). The results prove oxygen vacancies occurs at as leading process. This work constitutes new insight understanding behavior complex systems lays down fundaments implementation into nanoelectronic devices.