Bandgap and strain engineering in epitaxial rocksalt structure (Ti0.5Mg0.5)1−xAlxN(001) semiconductors

• DOI: 10.1039/d0tc03598j
• Publication Date: 2020-08-24T02:03:36Z
• Authors: Baiwei Wang; Minghua Zhang; Vijaya Adhikari; Peijiao Fang; Sanjay V. Khare; Daniel Gall
• Keywords: 02 engineering and technology; 0210 nano-technology

The model system (Ti0.5Mg0.5)1−xAlxN is used to demonstrate the tunability of both bandgap and strain state in rocksalt-structure nitride semiconductors.