MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

• DOI: 10.1039/d0tc05374k
• Publication Date: 2021-01-11T03:57:58Z
• Authors: Jintong Wu; Zongwei Xu; Lei Liu; Alexander Hartmaier; Mathias Rommel; Kai Nordlund; Tao Wang; Rebecca Janisch; Junlei Zhao
• Keywords: Physical sciences; 0103 physical sciences; 01 natural sciences

For the first time, doping efficiency and defect evolution of p-type by aluminum in SiC are clarified distinguished an MD study.