Modulating thermal conductance across the metal/graphene/SiO2 interface with ion irradiation

• DOI: 10.1039/d1cp03563k
• Publication Date: 2021-09-21T06:01:34Z
• Authors: Yu Zhao; Yi Tao; Wei Xu; Shuyu Huang; Ming Guo; Jingjie Sha; Juekuan Yang; Yunfei Chen
• Keywords: Microelectronics

Optimizing the efficiency of heat dissipation across an interface is a great challenge with continuously increasing integration microelectronic devices. In this work, effective method in tuning conduction Al/graphene/SiO2 reported. It was found that interfacial thermal conductance Al/irradiated graphene/SiO2 can be increased by factor 3, as compared Al/pristine graphene/SiO2. The X-ray photoelectron spectroscopy (XPS) analysis indicates ion irradiation may promote formation CO bonds on irradiated graphene surface, which beneficial to enhancement conductance. density functional theory (DFT) calculations reveal addition formed between O atoms and Al atoms, adsorption strength intensified, plays dominant role enhancing Al/graphene/SiO2.