Anti-ambipolar behavior and photovoltaic effect in p-MoTe2/n-InSe heterojunctions

• DOI: 10.1039/d1tc02497c
• Publication Date: 2021-07-08T14:44:22Z
• Authors: Yiming Sun; Wei Gao; Xueping Li; Congxin Xia; Hongyu Chen; Li Zhang; Dongxiang Luo; Weijun Fan; Nengjie Huo; Jingbo Li
• Keywords: Ambipolar diffusion; Photodetection

The MoTe 2 /InSe heterojunctions exhibit an anti-ambipolar behavior with high peak-to-valley current ratio (>10 3 ) and a self-driven photodetection performance photoresponsivity of 15.4 mA W −1 specific detectivity up to ∼3.02 × 10 14 Jones.