Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

• DOI: 10.1039/d1tc04022g
• Publication Date: 2021-11-03T23:01:26Z
• Authors: Zhongxin Wang; Guodong Wang; Xintong Liu; Shouzhi Wang; Tailin Wang; Shiying Zhang; Jiaoxian Yu; Gang Zhao; Lei Zhang
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

This review systematically summarizes the latest research progress in 2D GaN and 2D AlN structures, their properties, fabrication methods and applications.