Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures

Quantum Efficiency Carrier lifetime
DOI: 10.1039/d1tc04760d Publication Date: 2021-12-16T09:41:04Z
ABSTRACT
The higher diffusivity in wider QWs increases the nonradiative recombination rate and reduces IQE.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (48)
CITATIONS (6)