Actual origin and precise control of asymmetrical hysteresis in an individual CH3NH3PbI3 micro/nanowire for optical memory and logic operation

• DOI: 10.1039/d2nh00209d
• Publication Date: 2022-07-22T12:21:05Z
• Authors: Runna Gou; Zhiyong Ouyang; Changsen Xu; Song He; Shouduan Cheng; Cencen Shi; Jie Zhao; Yanhe Xiao; Shuijin Lei; Baochang Cheng
• Keywords: Hysteresis

Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due hysteresis behaviour. Moreover, for origin, there exist different opinions. Herein, we demonstrate a route realize precise control the electrical transport of single micro/nanowire by constructing two-terminal device with asymmetric Ag C electrodes, be clearly identified as synergistic effect redox reaction at interface electrode injection ejection holes interfacial traps rather than bulk effect. The show superior bias amplitude illumination intensity dependence loops typical bipolar resistive switching features. Thus, multilevel nonvolatile optical memory effectively realized modulation bias, moreover logic OR gate operation successfully implemented voltage input signals well. This work reveals provides new insight origin that attributed two asymmetrical interfaces, therefore precisely controlling outstanding potential multifunctional devices integrated operation.