Enhancing UV photodetection performance of an individual ZnO microwire p–n homojunction via interfacial engineering

• DOI: 10.1039/d2nr06431f
• Publication Date: 2022-12-23T12:41:14Z
• Authors: Kai Tang; Mingming Jiang; Bingwang Yang; Tong Xu; Zeng Liu; Peng Wan; Caixia Kan; Daning Shi
• Keywords: Homojunction; Ultraviolet; Photodetection

As a typical broad bandgap semiconductor, ZnO has received considerable attention for developing optoelectronic devices in ultraviolet wavelengths, but suffers from lack of high-quality single-crystalline p-type ZnO. Herein, we report the realization homojunction photodetector, which involves Sb-doped microwire (ZnO:Sb MW) and n-type layer. The conductivity as-synthesized ZnO:Sb MWs was evidenced using an individual wire field-effect transistor. Due to its good rectifying ability excellent photovoltaic effect, constructed p-ZnO:Sb MW/n-ZnO is able work as photodetector self-biased reversely biased manners. By appropriately engineering band alignment p-ZnO:Sb/n-ZnO via MgO interface modification layer, optimized exhibits performance-enhanced detection capabilities, such light on/off ratio reaching up 1.6 × 108, responsivity over 267 mA W-1 specific detectivity approximately 1.2 1014 Jones upon 365 nm illumination at 0 V. detector also produces faster response with rise/recovery times 102 μs/3.6 ms. This study not only employed novel method synthesize genuine stability reproducibility, opened substantial opportunities high-performance devices.