Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors

• DOI: 10.1039/d2nr07234c
• Publication Date: 2023-02-09T10:43:59Z
• Authors: Haohan Chen; Yu Kang; Dong Pu; Ming Tian; Neng Wan; Yang Xu; Bin Yu; Wenjing Jie; Yuda Zhao
• Keywords: Memristor

Two-dimensional (2D) materials have become potential resistive switching (RS) layers to prepare emerging non-volatile memristors. The atomically thin thickness and the highly controllable defect density contribute construction of ultimately scaled memory cells with stable behaviors. Although conductive bridge random-access based on 2D hexagonal boron nitride has been widely studied, realization RS completely relying vacancies in performance superiority. Here, we synthesize carbon-doped h-BN (C-h-BN) a certain number defects by controlling weight percentage carbon powder source. These can form vacancy-based filament under an applied electric field. memristor displays bipolar low SET voltage 0.85 V shows long retention time up 104 s at 120 °C. response times RESET process are less than 80 ns 240 ns, respectively. current mapping atomic force microscopy demonstrates electric-field-induced tunneling from defective sites C-h-BN flake, revealing defect-based memristor. Moreover, excellent flexibility be wearable devices, maintaining variety bending environments after multiple cycles. provides new strategy for developing ultra-scaled units high controllability.