Transition from Schottky to Ohmic contacts in 2D Ge/GaAs heterostructures with high tunneling probability

• DOI: 10.1039/d3cp06189b
• Publication Date: 2024-03-01T09:22:36Z
• Authors: Yang Shen; Jianfeng Zhu; Qihao Zhang; Hua Zhu; Qianglong Fang; Xiaodong Yang; Baolin Wang
• Keywords: Ohmic contact; Schottky effect; Metal–semiconductor junction

Biaxial strain and electric field engineering induced the Schottky to Ohmic contact transition of a germanene/GaAs metal–semiconductor junction with electron injection efficiency exceeding 27%.