GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

• DOI: 10.1039/d3nr05904a
• Publication Date: 2024-03-15T17:21:02Z
• Authors: Sengunthar Karthi...; Steven W. Johnston; Dhammapriy Gayakwad; Suddhasatta Mahap...; Robert J. Bodnar; Jing Zhao; Rutwik Joshi; Mantu K. Hudait
• Keywords: 02 engineering and technology; 0210 nano-technology

Microwave reflection photoconductive decay carrier lifetimes of Ge0.94Sn0.06 materials on oriented GaAs substrates at 300 K.