Electronic and magnetic properties of GeS monolayer effected by point defects and doping
Chemistry
01 natural sciences
0104 chemical sciences
DOI:
10.1039/d3ra07942b
Publication Date:
2024-01-12T11:36:41Z
AUTHORS (4)
ABSTRACT
The effect of point defects (vacancy and antisites) and doping (with transition metals and pnictogen atoms) on GeS monolayer electronic and magnetic properties are systematically investigated.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (61)
CITATIONS (11)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....