A self-powered HgTe quantum dots/PBDB-T:Y6 bipolar broadband photodetector for logic gates

• DOI: 10.1039/d4mh01925c
• Publication Date: 2025-02-07T02:40:51Z
• Authors: Wenxin Zeng; Zaihua Duan; Yichen Bu; Haichao Yu; Changhong Wang; Xing Tang; Jingwen Yang; Zhen Yuan; Yadong Jiang; Huiling Tai

Optoelectronic logic gates (OELGs) have become one of the excellent candidates for devices in post Moore era, with great potential complex optical computing, secure communication, and image processing. As an important component OELGs, bipolar photodetectors (BPDs) face problems such as limited functionality, narrow response range, slow speed, high-power consumption. Here, we propose a self-powered BPD back-to-back structure based on HgTe quantum dot (QD) organic material PBDB-T:Y6 stacking. The results show that exhibits broadband photoresponse (300-1800 nm) under bias voltage 0 V, rapid speed microsecond range. By modulating device three light sources within positive negative wavelength ranges, QDs/PBDB-T:Y6 successfully achieves five gate operations ("OR", "AND", "NAND", "NOR", "NOT"). Based fast optoelectronic response, further confirm application communication encryption. This work provides useful reference combination QDs materials development high-performance BPDs.