SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

• DOI: 10.1049/el:20040048
• Publication Date: 2004-01-07T12:44:44Z
• Authors: L.-E. Wernersson; S. Kabeer; V. Zela; E. Lind; J. Zhang; W. Seifert; T. Kosel; A. Seabaugh
• Keywords: Tunnel diode

A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first are reported this growth method. Intrinsic SiGe-layers on highly boron-doped p+-Si layers, while post-growth proximity rapid thermal diffusion phosphorous into is employed to form an n+-layer. Tunnel with a depletion layer width about 6 nm have realised Si0.74Ge0.26, showing peak current density 0.18 kA/cm2 peak-to-valley ratio 2.6 at room temperature.