Pulsed 0.75 kW output single-ended GaN-FET amplifier for L/S band applications

• DOI: 10.1049/el:20062950
• Publication Date: 2006-11-08T23:05:07Z
• Authors: A. Wakejima; T. Nakayama; K. Ota; Y. Okamoto; Y. Ando; N. Kuroda; M. Tanomura; K. Matsunaga; H. Miyamoto
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology; 7. Clean energy

A pulsed 0.75 kW output GaN-FET amplifier for L/S band high power applications has been successfully developed. A single-ended configuration is adopted to make the amplifier compact and simple. The amplifier delivers a saturated output power of 0.75 kW under pulsed RF operation at 2.14 GHz, which is believed to be the highest output power reported in an L/S band single-packaged device.