InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

• DOI: 10.1049/el:20083328
• Publication Date: 2008-01-30T23:26:57Z
• Authors: K.L. Lew; S.F. Yoon; H. Tanoto; K.P. Chen; C.L. Dohrman; D.M. Isaacson; E.A. Fitzgerald
• Keywords: Heterojunction bipolar transistor; Input offset voltage; Heterostructure-emitter bipolar transistor; Buffer (optical fiber)

What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate reported. The collector-emitter offset voltage and knee of device are ∼150 mV <1 V, respectively. maximum gain is∼25 at collector current of∼100 mA. base ideality factor ∼1.01 ∼1.4, These results show good potential for integrating Si using compositionally graded SiGe buffer layer approach.