Temperature sensor using BJT-MOSFET pair

• DOI: 10.1049/el.2012.0380
• Publication Date: 2012-04-25T00:42:08Z
• Authors: R.-L. Wang; C.-W. Yu; C. Yu; T.-H. Liu; C.-M. Yeh; C.-F. Lin; H.-H. Tsai; Y.-Z. Juang
• Keywords: Biasing; Linearity; Atmospheric temperature range; Insulated-gate bipolar transistor

A temperature sensor using the cascade configuration of a pnp bipolar junction transistor (BJT) and p-type metal-oxide-semiconductor field effect (PMOSFET) was designed measured. Under biasing current proportional to absolute for BJT temperature-stable PMOSFET, plots emitter-base source-gate bias voltages against show nearly complementary nonlinear characteristics. Therefore, which output is sum two will exhibit good linearity. For range from 0 125°C, fabricated has sensitivity −3.39 mV/°C or so with linearity up 99.996%.