2–4 GHz wideband power amplifier with ultra‐flat gain and high PAE

• DOI: 10.1049/el.2012.4135
• Publication Date: 2013-03-04T18:06:57Z
• Authors: X. Ding; S. He; F. You; S. Xie; Z. Hu
• Keywords: High-gain antenna; Wideband; Power gain

Demonstrated is a 2–4 GHz wideband power amplifier (WPA) using Cree 10 W GaN HEMT CGH40010. Also novel process to find the optimum impedances presented, with which gain flatness can be taken into account. A compact PCB has been fabricated and tested continuous waves at low (20 dBm) high (28 input level. From measured results, level, 13.1–14.1 dB across 2.0–3.9 12.3–14.1 2.0–4.0 GHz. For large signals, 11.1–12.6 power‐added efficiency (PAE) 36.5–53.4% while output around 40 dBm. Gain keeps less than 1 beyond 95% of band. 5 MHz WCDMA signal, adjacent channel leakage ratio WPA digital predistortion reaches − 45.3 dBc an average drain 46.7%.