Efficient March test algorithm for 1T1R cross‐bar with complete fault coverage

• DOI: 10.1049/el.2016.1693
• Publication Date: 2016-06-27T17:06:55Z
• Authors: Peng Liu; Zhiqiang You; Jishun Kuang; Zhipeng Hu; Heng Duan; Weizheng Wang
• Keywords: 0202 electrical engineering, electronic engineering, information engineering; 02 engineering and technology

As an attractive option of future non‐volatile memories, resistive RAM (RRAM) has attracted more attentions. Among RRAM architectures, one transistor one memristor (1T1R) cross‐bar is the most fledged one. A March C*‐1T1R algorithm is proposed for 1T1R cross‐bar. The pass–fail fault dictionary of the proposed March test algorithm is analysed. Analytical results show that the proposed test algorithm can detect all the modelled faults caused by the parametric variation of memristors, transistors and their interconnecting wires with a little test time overhead compared with previous methods.