Failure analysis of blocking leakage for high voltage RB-GCT

Blocking (statistics) Leakage (economics)
DOI: 10.1049/icp.2024.2433 Publication Date: 2025-01-08T14:15:51Z
ABSTRACT
The GCT chip is the core component unit of integrated gate commutated thyristor (IGCT) device, which mainly includes three electrodes: gate, cathode, and anode. controlled by driving current to switch block cathode-anode current. In this paper, combining structure manufacturing process a failure analysis method macroscopic microscopic analysis, such as bidirectional blocking characteristic detection gate-anode, hot spot positioning on both sides, optical detection, SEM composition SRP test, was used locate analyse high-voltage with abnormal problems caused excessive leakage gate-anode characteristic. Finally, key location reasons were determined.
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