Failure analysis of blocking leakage for high voltage RB-GCT

• DOI: 10.1049/icp.2024.2433
• Publication Date: 2025-01-08T14:15:51Z
• Authors: Peifei Wu; Xiaoguang Wei; Ling Li; Hongdan Zhang; Yu Zhang; Rui Liu; Ningfei Sun; Qianqian Jiao; Shiyu Ji; Ningyi Wang; Xinyu Huo
• Keywords: Blocking (statistics); Leakage (economics)

The GCT chip is the core component unit of integrated gate commutated thyristor (IGCT) device, which mainly includes three electrodes: gate, cathode, and anode. controlled by driving current to switch block cathode-anode current. In this paper, combining structure manufacturing process a failure analysis method macroscopic microscopic analysis, such as bidirectional blocking characteristic detection gate-anode, hot spot positioning on both sides, optical detection, SEM composition SRP test, was used locate analyse high-voltage with abnormal problems caused excessive leakage gate-anode characteristic. Finally, key location reasons were determined.