Measurement and modelling of power electronic devices at cryogenic temperatures

• DOI: 10.1049/ip-cds:20050359
• Publication Date: 2006-10-26T22:01:45Z
• Authors: A.J. Forsyth; S.Y. Yang; P.A. Mawby; P. Igic
• Keywords: Insulated-gate bipolar transistor; Cryogenic temperature; Atmospheric temperature range

Practical results are used to parameterise a physically based, compact IGBT model for three generations of (PT, NPT and IGBT3), at temperatures extending down 50 K. Full details presented the parameter variations with temperature over range 50–300 The models then examine performance sinusoidal pulse-width-modulated inverter leg cryogenic temperatures.