AlGaSb avalanche photodiode exhibiting a very low excess noise factor

• DOI: 10.1063/1.101095
• Publication Date: 2002-07-26T08:51:02Z
• Authors: S. Miura; T. Mikawa; H. Kuwatsuka; N. Yasuoka; T. Tanahashi; O. Wada
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

An Al0.053Ga0.947Sb avalanche photodiode (APD) has been fabricated and tested. First, measurement of an excess noise factor as well as an ionization rate ratio has been demonstrated. A low excess noise factor of 3.8, which is 1.2 dB lower than the conventional GaInAs APD, has been obtained. From this excess noise factor, the effective value of the hole-to-electron ionization rate ratio (keff) has been determined as high as 5, being in good agreement with the hole-to-electron ionization rate ratio (β/α) given by the multiplication data. This keff value is the highest ever reported for long-wavelength III-V APDs.