AlGaSb avalanche photodiode exhibiting a very low excess noise factor

• DOI: 10.1063/1.101095
• Publication Date: 2002-07-26T08:51:02Z
• Authors: S. Miura; T. Mikawa; H. Kuwatsuka; N. Yasuoka; T. Tanahashi; O. Wada
• Keywords: Impact ionization; APDS; Single-photon avalanche diode; Avalanche diode

An Al0.053Ga0.947Sb avalanche photodiode (APD) has been fabricated and tested. First, measurement of an excess noise factor as well ionization rate ratio demonstrated. A low 3.8, which is 1.2 dB lower than the conventional GaInAs APD, obtained. From this factor, effective value hole-to-electron (keff) determined high 5, being in good agreement with (β/α) given by multiplication data. This keff highest ever reported for long-wavelength III-V APDs.