Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study

• DOI: 10.1063/1.101819
• Publication Date: 2002-07-26T12:51:31Z
• Authors: S.-F. Chuang; S. D. Collins; R. L. Smith
• Keywords: 0103 physical sciences; 01 natural sciences

A transmission electron microscopy study of porous silicon reveals that pores selectively propagate in the 〈100〉 crystallographic directions on both n- and p-type silicon, independent of dopant concentration or anodization conditions.