Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

• DOI: 10.1063/1.102231
• Publication Date: 2002-07-26T12:51:12Z
• Authors: H. Temkin; D. G. Gershoni; S. N. G. Chu; J. M. Vandenberg; R. A. Hamm; M. B. Panish
• Keywords: 02 engineering and technology; 0210 nano-technology

We use a combination of electrical, optical, and structural characterization techniques to determine the critical layer thickness strained Ga1−xInxAs/InP quantum wells. Well compositions covering entire range strain available, from −3.8% (GaAs) +3.2% (InAs), were investigated. find that in this material system is unambiguously described by classical Matthews Blakeslee force balance model [J. Cryst. Growth 27, 118 (1974)]. Reverse leakage current strained-well samples grown p-i-n configuration shown be most direct reliable measure pseudomorphic limit.